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- Ammonolytical conversion of microcrystalline gallium antimonide GaSb to nanocrystalline gallium nitride GaN: thermodynamics vs. topochemistry. Mariusz Drygaś, Piotr Jeleń, Mirosław M. Bućko, Zbigniew Olejniczak, Jerzy F. Janik
, RSC Adv.
, 2015
, 5
, 82576
- Halogen etching of group 13–15 (3–5) semiconductors and its relevance to chemical–mechanical polishing. The reactions of dibromine, dichlorine and sodium hypochlorite with gallium arsenide and related materials. Laurence Mcghee, Irene Nicol, Robert D. Peacock, Max I. Robertson, Paul R. Stevenson, John M. Winfield
, J. Mater. Chem.
, 1997
, 7
, 2421
- Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials. Simon Carter, Andy S. Fisher, Phill S. Goodall, Michael W. Hinds, Steve Lancaster, Sian Shore
, J. Anal. At. Spectrom.
, 2011
, 26
, 2319
- Performance improvement in a Ti–Sb–Te phase change material by GaSb doping. Liangliang Chen, Sannian Song, Zhitang Song, Le Li, Xin Zhang, Qianqian Zheng, Wanting Zheng, Xiuwei Zhu, Luyao Lu, Hehong Shao
, CrystEngComm
, 2016
, 18
, 787
- A bright future for engineering piezoelectric 2D crystals. Peter C. Sherrell, Marco Fronzi, Nick A. Shepelin, Alexander Corletto, David A. Winkler, Mike Ford, Joseph G. Shapter, Amanda V. Ellis
, Chem. Soc. Rev.
, 2022
, 51
, 650
- Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. Yun Li, Wenzhi Yu, Kai Zhang, Nan Cui, Tinghe Yun, Xue Xia, Yan Jiang, Guangyu Zhang, Haoran Mu, Shenghuang Lin
, Mater. Horiz.
, 2024
, 11
, 2572
- Electrochemical behavior and electrodeposition of gallium in 1,2-dimethoxyethane-based electrolytes. Wouter Monnens, Pin-Cheng Lin, Clio Deferm, Koen Binnemans, Jan Fransaer
, Phys. Chem. Chem. Phys.
, 2021
, 23
, 15492
- Ammonolysis of gallium phosphide GaP to the nanocrystalline wide bandgap semiconductor gallium nitride GaN. Mariusz Drygas, Maciej Sitarz, Jerzy F. Janik
, RSC Adv.
, 2015
, 5
, 106128
- Ammonolysis of polycrystalline and amorphized gallium arsenide GaAs to polytype-specific nanopowders of gallium nitride GaN. Mariusz Drygaś, Piotr Jeleń, Marta Radecka, Jerzy F. Janik
, RSC Adv.
, 2016
, 6
, 41074
- Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures. Mantu K. Hudait, Steven W. Johnston, Michael Meeker, Giti A. Khodaparast
, J. Mater. Chem. C
, 2022
, 10
, 17994