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17Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate, Bismuth-Containing Compounds C3H9Bi Trimethylbismuth, Molecules containing Three or Four Carbon Atoms Ultra-low temperature OMVPE of InAs and InAsBi, Journal of Electronic Materials Generation of a methylbismuth species and its electrothermal vaporization for the determination of bismuth by inductively coupled plasma mass spectrometry, Fresenius' Journal of Analytical Chemistry Growth of Bi2O3 rods using a trimethylbismuth and oxygen mixture, Applied Physics A Oxidation of bismuth nanodroplets deposit on GaAs substrate, Applied Physics A MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance, Journal of Materials Science: Materials in Electronics Three-Dimensional Bi2Te3 Nanocrystallites Embedded in 2D Bi2Te3 Films Grown by MOCVD, Journal of Electronic Materials Deposition of Nanocrystalline Bi2Te3 Films Using a Modified MOCVD System, Journal of Electronic Materials Fabrication of Bismuth Telluride-Based Alloy Thin Film Thermoelectric Devices Grown by Metal Organic nChemical Vapor Deposition, Journal of Electronic Materials