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52C. Blackman, C. J. Carmalt, S. A. O'Neill, I. P. Parkin, L. Apostilco and K. C. Molloy.
, J. Mater. Chem., 2001, 11, 2408. Antiphase Boundaries in GaAs/Ge and GaP/Si, Microscopy of Semiconducting Materials 2007 C4H11P t-Butylphosphine, Molecules containing Three or Four Carbon Atoms Effects of the Surface on CuPt Ordering During OMVPE Growth, Spontaneous Ordering in Semiconductor Alloys In Situ gas-phase diagnostics by coherent anti-stokes raman scattering, Dye Lasers: 25 Years Laser Diodes for Local Access, Photonic Networks Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates, Dilute III-V Nitride Semiconductors and Material Systems Experimental, GaP Heteroepitaxy on Si(100) Self-limiting etching prior to self-limiting growth in ultra-high vacuum for obtaining clean interface, Proceedings of the 25th International Conference on the Physics of Semiconductors Part I Excimer laser assisted selective epitaxy of GaP, Applied Physics A